Intel
Memory Circuit Design Engineer
$164K–$269K
US, Texas, Austin · Full-time · Posted Oct 19, 2026
- Experience
- 6+ years with a bachelor's degree; 4+ years with a master's degree; or 2+ years of educational or work experience with a PhD.
- Education
- Bachelor's degree in Electrical/Computer Engineering or a STEM-related field; or master's degree or PhD in the same field(s).
- Visa sponsorship
- The posting refers applicants to Intel’s U.S. immigration sponsorship guidelines but does not state a visa policy.
About the job
Designs and develops memory circuits and related digital circuits for future Intel CPU and SoC products, optimizing power, performance, area, and scalability.
What you'll do
- Design, characterize, and simulate memory circuits, including SRAMs, caches, register files, ROMs, and custom memories.
- Optimize memory paths and PPA; design memory bit-cells, peripheral circuits, arrays, and IP.
- Define methodologies and collaborate across teams to deliver designs to project schedules.
What they ask for
- Bachelor's degree in Electrical/Computer Engineering or a STEM-related field with 6+ years of experience; or Master's degree in the same field with 4+ years; or PhD in the same fields with 2+ years of educational or work experience.
- Proficiency in CMOS circuit design, memory design, and circuit trade-offs for power, performance, and area.
- Expertise in Very Large Scale Integration (VLSI) circuits and design methodologies.
Nice to have
- Experience in low-power implementation techniques.
- Familiarity with circuit and layout trade-offs, digital circuit design tools and flows, dynamic simulations, variation analysis, and signal integrity analysis.
Pay
$164,470.00-269,100.00 USD (target compensation range; pay type not specified)
Tools
CMOS, SRAMs, SoCs, VLSI
Model-written summary · the original posting is authoritative