Micron
Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology
Boise, ID - Main Site · Full-time · Posted Aug 11, 2026
- Experience
- MS with 5+ years of industry experience, or PhD with hands-on research.
- Education
- MS or PhD in Electrical Engineering, Physics, or a related field.
About the job
Defines, characterizes, and improves DRAM and emerging memory device and cell technologies to meet performance, reliability, yield, and scaling goals.
What you'll do
- Set device-level electrical specifications and run experiments to optimize cell and access-device performance.
- Develop device models and reliability stress methods; analyze electrical, array, and failure data to identify performance and yield limiters.
- Collaborate with process integration, design, and product engineering to turn device findings into technology and product improvements.
What they ask for
- MS with 5+ years of industry experience or PhD with hands-on research in Electrical Engineering, Physics, or a related field.
- Strong expertise in semiconductor device physics, including CMOS, diodes, and related devices.
- Deep knowledge of memory technologies such as DRAM, NAND, NOR, or SRAM; experience with DRAM array characterization and failure analysis.
- Proficiency in data analysis, DOE, Agentic AI, and statistical techniques using tools such as JMP or Python.
Nice to have
- Experience across process integration and circuit or architecture domains.
- Strong communication, collaboration, and problem-solving skills, including communicating technical status to management.
Tools
TCAD, JMP, Python, CMOS, DRAM, NAND, NOR, SRAM
AI focus
Proficiency in Agentic AI is required; the posting does not specify other AI work in the role.
Model-written summary · the original posting is authoritative