Drimva

Micron

Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology

Boise, ID - Main Site · Full-time · Posted Aug 11, 2026

Experience
MS with 5+ years of industry experience, or PhD with hands-on research.
Education
MS or PhD in Electrical Engineering, Physics, or a related field.

About the job

Defines, characterizes, and improves DRAM and emerging memory device and cell technologies to meet performance, reliability, yield, and scaling goals.

What you'll do

  • Set device-level electrical specifications and run experiments to optimize cell and access-device performance.
  • Develop device models and reliability stress methods; analyze electrical, array, and failure data to identify performance and yield limiters.
  • Collaborate with process integration, design, and product engineering to turn device findings into technology and product improvements.

What they ask for

  • MS with 5+ years of industry experience or PhD with hands-on research in Electrical Engineering, Physics, or a related field.
  • Strong expertise in semiconductor device physics, including CMOS, diodes, and related devices.
  • Deep knowledge of memory technologies such as DRAM, NAND, NOR, or SRAM; experience with DRAM array characterization and failure analysis.
  • Proficiency in data analysis, DOE, Agentic AI, and statistical techniques using tools such as JMP or Python.

Nice to have

  • Experience across process integration and circuit or architecture domains.
  • Strong communication, collaboration, and problem-solving skills, including communicating technical status to management.

Tools

TCAD, JMP, Python, CMOS, DRAM, NAND, NOR, SRAM

AI focus

Proficiency in Agentic AI is required; the posting does not specify other AI work in the role.

Model-written summary · the original posting is authoritative

First seen Oct 15, 2026 · Last verified Nov 5, 2026 (UTC)