Intern - Advanced DRAM Cell & Device Technology

What you'll do

• Evaluate DRAM devices, capacitors, cell-stack elements, architectures, materials, and integration schemes using characterization and data analysis.
• Design and run silicon experiments; perform electrical, physical, and materials characterization and statistical analysis to identify improvements.
• Analyze device- and array-level behavior and collaborate with engineering teams on technology optimization; use AI tools where appropriate to support analysis and workflows.

What they ask for

• Currently pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a related technical field; cannot graduate before September 2027.
• Understanding of semiconductor fundamentals, including device physics, materials science, characterization, and advanced-memory concepts.
• Experience with electrical characterization, device testing, statistical analysis, and interpreting experimental or simulation data.
• Familiarity with DRAM operation, including activation, sensing, retention, and disturb mechanisms; proficiency with Python, MATLAB, JMP, or similar tools and familiarity with AI-assisted engineering and data-analysis tools.

Nice to have

• Experience in DRAM or NAND device development, characterization, or technology research.
• Experience with semiconductor materials characterization, process development, thin film or interface engineering, TCAD simulation, or advanced memory research.

Tools

Python, MATLAB, JMP, TCAD simulation, AI-assisted engineering and data analysis tools, Large Language Models (LLMs)

AI focus

Use AI-assisted and generative AI tools, where appropriate, to improve data analysis, workflow efficiency, technical decision-making, research productivity, and technical insights.