Micron
Intern - Advanced DRAM Process Integration
Boise, ID - Main Site · Internship · Posted Aug 19, 2026
- Experience
- Research experience required; no number of years stated.
- Education
- Currently pursuing a PhD in Materials Science, Physics, Chemical Engineering, or a related technical field.
About the job
Support development of next-generation DRAM technologies by designing and analyzing experiments, investigating device performance and reliability, and collaborating across engineering teams.
What you'll do
- Develop advanced DRAM components, including charge storage structures and thin-film transistors.
- Design, conduct, and analyze experiments in an R&D fabrication environment.
- Analyze inline, electrical, and probe data and work with cross-functional teams to address performance, yield, and reliability challenges.
What they ask for
- Currently pursuing a PhD in Materials Science, Physics, Chemical Engineering, or a related technical field.
- Research experience in semiconductor device fabrication, electrical characterization, material characterization, or a related semiconductor field.
- Understanding of semiconductor device physics and process integration concepts.
- Experience designing experiments and analyzing technical data; strong written and verbal communication skills.
Nice to have
- Experience with advanced DRAM, memory devices, thin-film transistors, or related semiconductor technologies.
- Experience with statistical analysis, modeling, or AI tools in technical research or engineering.
AI focus
Use approved AI and AI-assisted tools to support engineering analysis, data interpretation, productivity, and technology development.
Model-written summary · the original posting is authoritative