Drimva

Micron

Intern - Engineer, HIG HBM DTPCO

Richardson, TX · Internship · Posted Oct 5, 2026

Experience
3+ years; no alternatives stated.
Education
Bachelor's degree in Electrical Engineering, Computer Engineering, Materials Science, Physics, or a related technical field.

About the job

Characterize HBM devices under thermal, mechanical, and electrical stress, analyze silicon data, and develop tests and models to improve performance, yield, reliability, and future designs.

What you'll do

  • Design, debug, and complete bench-level test setups and measurement flows for HBM devices.
  • Run stress characterization and analyze electrical, thermal, mechanical, and MBIST data to investigate root causes and recommend corrective actions.
  • Develop test programs, workloads, and analysis workflows using programming languages and AI tools.

What they ask for

  • Bachelor's degree in Electrical Engineering, Computer Engineering, Materials Science, Physics, or a related technical field.
  • 3+ years of experience in semiconductor characterization, failure analysis, product engineering, test engineering, or a related field.
  • Hands-on experience with laboratory equipment such as oscilloscopes, SMUs, power supplies, thermal systems, probe stations, or automated test hardware.
  • Programming experience in Python and at least one additional language such as C/C++ or Verilog; experience analyzing complex datasets and conducting root-cause investigations.

Nice to have

  • Master's or PhD in a related field; experience with DRAM, HBM, memory subsystems, advanced packaging, or silicon characterization.
  • Knowledge of reliability, yield, DOE, MBIST, semiconductor test methods, or AI-enabled tools.

Tools

Python, Verilog, C/C++, SMUs, oscilloscopes, power supplies, thermal systems, MBIST

AI focus

Use AI, Agentic AI, and Generative AI tools to improve engineering workflows, data analysis, test development efficiency, and problem-solving.

Model-written summary · the original posting is authoritative

First seen Oct 15, 2026 · Last verified Nov 5, 2026 (UTC)