Drimva

Micron

Intern - Process Pathfinding, DRAM Dry Etch

Boise, ID - Main Site · Internship · Posted Aug 13, 2026

Experience
Academic or practical experience in one or more listed technical areas; no years specified.
Education
Currently pursuing a Master's or PhD degree in a listed or related technical field; exceptional undergraduate candidates may be considered.

About the job

Supports research and development of advanced dry etch processes for next-generation memory technologies, using experiments, characterization, and data analysis.

What you'll do

  • Conduct experiments and research to develop dry etch solutions for emerging memory technologies.
  • Develop and optimize processes against physical and electrical performance requirements; analyze process and hardware capability and help resolve problems.
  • Communicate technical results and recommendations, follow safety practices, and use AI and digital tools to support analysis and process development.

What they ask for

  • Currently pursuing a Master's or PhD in Materials Science, Physics, Chemistry, Chemical Engineering, or a related technical field; exceptional undergraduate candidates may be considered.
  • Graduation date after September 2027.
  • Academic or practical experience in vacuum systems, RF/plasma science, chemistry, or semiconductor processing equipment.
  • Ability to analyze technical data and communicate findings in written reports or presentations.

Nice to have

  • Experience with semiconductor manufacturing, plasma etch, thin films, materials characterization, or related research.
  • Experience with data analysis, statistical methods, digital technologies, or AI-assisted tools for engineering work.

Tools

dry etch, vacuum systems, RF/plasma, AI

AI focus

Use AI and digital tools to accelerate data analysis, technical learning, documentation, and process development; AI-assisted tools and applications are also listed as preferred experience.

Model-written summary · the original posting is authoritative

First seen Oct 15, 2026 · Last verified Nov 4, 2026 (UTC)